Semiconductor device with fuse box and method for fabricating the same

ABSTRACT

A semiconductor device comprises a semiconductor substrate having a bonding pad region; and a bonding pad and a fuse box formed in the bonding pad region. Thus, the chip size can be reduced and the manufacturing yield can be increased.

This application is a Divisional of U.S. patent Ser. No. 10/397,905,filed on Mar. 25, 2003, now pending, which claims priority from KoreanPatent Application No. 2002-18540, filed on Apr. 4, 2002, the contentsof which are incorporated herein by reference in their entirety.

BACKGROUND OF THE INVENTION

1. Field of the Invention

The present invention relates to a semiconductor device and, moreparticularly, to a semiconductor device with a fuse box and a method forfabricating the same.

2. Description of Related Art

The more the manufacturing technology of semiconductor devices improves,the more a chip size of the semiconductor devices is reduced toincorporate as many chips as possible in a wafer.

Generally, the semiconductor device includes a bonding pad region, inwhich bonding pads are formed, and a fuse region, in which a fuse box,through which a fuse cutting process is performed, is formed. Thebonding pad region and the fuse region have not been reduced in size incomparison to the chip size reduction.

FIGS. 1A to 1D illustrate a conventional method of forming a fuse boxand a bonding pad in a fuse region and a bonding pad region,respectively.

Referring to FIG. 1A, a semiconductor substrate 100 has a fuse region101 and a bonding pad region 102. A plurality of polysilicon fuses 110are then formed in the fuse region 101. When a polysilicon layer ispatterned in a memory cell region (not shown) to form a bit line, thefuses 110 may be formed concurrently in the fuse region 101.

A first interlayer insulating film 120 is formed on the semiconductorsubstrate 100 including the fuses 110, and an etching stop layer 130comprised of polysilicon is sequentially formed on the first interlayerinsulating film 120. The etching stop layer 130 may be formedsimultaneously when a polysilicon layer for a capacitor plate is formedin the memory cell region.

Next, a second interlayer insulating film 140 is formed on the etch stoplayer 130 and a first metal line 150 is sequentially formed in thebonding pad region 102 on the second interlayer insulating film 140.

Referring to FIG. 1B, a third interlayer insulating film 160 is formedover the metal line 150. Subsequently, the third interlayer insulatingfilm 160 in the bonding pad region 102 is etched to form an opening 161therein to expose a portion of the first metal line 150. Simultaneously,the third interlayer insulating film 160 and the second interlayerinsulating film 140 in the fuse region 101 are etched to form a via hole165 therein to expose a portion of the etching stop layer 130.

Next, a metal layer is deposited on the semiconductor substrate 100 andpatterned to form a second metal line 170 in the bonding pad region 102.Also, a guard ring 175 is formed in the fuse region 101 in the via hole165. The second metal line 170 is connected to the first metal line 150via the opening 161.

Turning to FIG. 1C, a passivation layer 180 is formed on thesemiconductor substrate 100.

Referring to FIG. 1D, the passivation layer 180 is etched to expose thesecond metal line 170, thereby forming a bonding pad opening 190 in thebonding pad region 102.

In addition, the passivation layer 180, the second and the thirdinterlayer insulating film 140 and 160, and the etch stop layer 130 aresequentially etched to expose the first interlayer insulating film 120over the fuses 110, thereby forming the fuse box 195 in the fuse region101.

In the conventional semiconductor device described above, the bondingpad region and the fuse region are separately arranged in a peripheralregion of the semiconductor substrate, which is an obstacle to reductionof the chip size.

SUMMARY OF THE INVENTION

In an effort to overcome the problems described above, it is a featureof an embodiment of the present invention to provide a semiconductordevice with a bonding pad and a fuse box both of which are formed in abonding pad region, capable of reducing the chip size and a method forfabricating the same.

In accordance with one aspect of the present invention, there isprovided a semiconductor device with a bonding pad and a fuse box in abonding pad region of a semiconductor substrate.

In accordance with another aspect of the present invention, asemiconductor device comprises a plurality of fuses formed in a bondingpad region of a semiconductor substrate; an insulation film overlyingthe fuses; a bonding pad overlying the insulation film in the bondingpad region; and a passivation layer formed in the insulation film andincluding a bonding pad opening to expose the bonding pad, wherein thebonding pad opening includes a fuse box to expose the insulation filmover the fuses.

In accordance with yet another aspect of the present invention, asemiconductor device comprises a plurality of fuses formed in a bondingpad region of a semiconductor substrate; a first interlayer insulatingfilm formed overlying the fuses; a first metal line and metal patternsformed on the first interlayer insulating film in the bonding padregion; a second interlayer insulating film formed on the metalpatterns; a second metal line formed on the second interlayer insulatingfilm over the first metal line; a passivation layer formed on theresulting structure and including a bonding pad opening to expose thesecond metal line; and a fuse box formed within the bonding pad openingto expose the first interlayer insulating film over the fuses.

In accordance with still further another aspect of the presentinvention, there is provided a method for manufacturing a semiconductordevice. A plurality of fuses formed in a bonding pad region of asemiconductor substrate. An insulation film is formed overlying theplurality of fuses. A bonding pad is formed overlying the insulationfilm in the bonding pad region. A passivation layer is formed overlyingthe insulation film and including a bonding pad opening to expose thebonding pad. The bonding pad opening includes a fuse box to expose aportion of the insulation film covering the fuses.

BRIEF DESCRIPTION OF THE DRAWINGS

The above object and advantages of the present invention will becomemore apparent by describing in detail a preferred embodiment thereofwith reference to the attached drawings in which:

FIGS. 1A to 1D are cross-sectional views of a semiconductor deviceshowing a method of forming a fuse box and a bonding pad in a fuseregion and a bonding pad region, respectively, in accordance with theconventional art;

FIGS. 2A to 2D are cross-sectional views of a semiconductor device takenalong a line IId-IId in FIG. 3 for showing a method of forming a fusebox and a bonding pad in a bonding pad region in accordance with thepresent invention; and

FIG. 3 is a plan view of the bonding pad region of a semiconductordevice in which the fuse box is formed in accordance with the presentinvention.

DETAILED DESCRIPTION OF THE PREFERRED EMBODIMENTS

Embodiments of the present invention will now be described more fullywith reference to the accompanying drawings, in which preferredembodiments of the invention are shown. The same reference numerals indifferent drawings represent the same elements.

FIGS. 2A to 2D are cross-sectional views of a semiconductor deviceillustrating a method of forming a fuse box and a bonding pad in abonding pad region in accordance with an embodiment of the presentinvention. FIGS. 2A to 2D illustrate the cross-sectional views takenfrom a different direction than the views of FIGS. 1A to 1D. Inparticular, FIGS. 2A to 2D are taken from a longitudinal direction ofthe fuse and the bonding pad taken along line IId-IId in FIG. 3.

Referring to FIG. 2A, a plurality of fuses 210 are formed in a bondingpad region 202 of a semiconductor substrate 200. The fuses 210 can beformed of any suitable materials including polysilicon. When apolysilicon layer is patterned in a memory cell region (not shown) toform a bit line, the fuses 210 may be concurrently formed in the bondingpad region 202.

Next, a first interlayer insulating film 220 is formed on thesemiconductor substrate 200 including the fuses 210. Then, an etchingstop layer 230 is formed on the first interlayer insulating film 220.The etching stop layer 230 is preferably formed of polysilicon and isused as an etching stopper in processes of forming a via hole for aguard ring and forming a fuse box. The etching stop layer 230 may beformed concurrently with formation of a polysilicon layer for acapacitor plate in the memory cell region (not shown).

Next, a second interlayer insulating film 240 is formed on thesemiconductor substrate 200. Next, a metal layer is formed and patternedon the second interlayer insulating film 240, thereby forming a firstmetal line 250 and metal patterns 255 on the second inter-insulationfilm 240 in the bonding pad region 202. A portion 240 a of the secondinterlayer insulating film 240 is exposed between the metal patterns 255to define a guard ring 275 (FIG. 2B). A via hole 265 is formed byetching the exposed portion 240 a of the second interlayer insulatingfilm 240 in the subsequent guard ring formation process.

As shown in FIG. 2B, a third interlayer insulating film 260 is formed onthe metal patterns 255. Then, the third interlayer insulating film 260and the second interlayer insulating film 240 are etched in the portion240 a until the etching stop layer 230 is exposed, thereby forming thevia hole 265. The via hole 265 is formed self-aligned with the metalpatterns 255.

Although not shown, concurrently with formation of the via hole 265, anopening (not shown) is formed in the third interlayer insulating film260 by etching to expose the first metal line 250 over the first metalline 250.

Next, a metal layer is deposited and patterned on the resultingstructure, thereby forming a second metal line 270 that contacts thefirst metal line 250 via the opening (not shown). The second metal line270 forms a bonding pad. Also, the guard ring 275 is formed in the viahole 265.

As shown in FIG. 2C, a passivation layer 280 is formed on the resultingstructure including the second metal line 270 and the guard ring 275.The passivation layer 280 is preferably comprised of a double layerincluding a silicon nitride layer and an oxide layer. The siliconnitride layer is preferably formed by a chemical vapor deposition (CVD)process and the oxide layer is preferably formed by a high-densityplasma (HDP) deposition process. One skilled in the art will appreciatethat other suitable methods can be used to form the silicon nitridelayer or the oxide layer.

As shown in FIG. 2D, the passivation layer 280 is etched to form abonding pad opening 290 that exposes the second metal line 270. Exposedportions of the third interlayer insulating film 260 and the secondinterlayer insulating film 240 between the second metal line 270 and theguard ring 275 are etched until the etching stop layer 230 is exposed.Then, a portion of the etching stop layer 230 is etched to form the fusebox 295 within the bonding pad opening 290.

During etching of the passivation layer 280 to form the bonding padopening 290, the second metal line 270 and the guard ring 275 act as anetching stopper. The fuse box 295 is formed self-aligned with the secondmetal line 270 and the guard ring 275 and also with the first metal line250 and the metal pattern 255.

A distance between the second metal line 270 and the guard ring 275 isformed wider than a distance between the first metal line 250 and themetal pattern 255 so that the area of the fuse box 295 is widely formed.

Further, since the etching stop layer 230 protects the first interlayerinsulating film 220 from being etched during formation of the fuse box295, the thickness of the first interlayer insulating film 220 over thefuse 210 remains substantially uniform.

The guard ring 275 is provided to inhibit moisture from permeatingthrough the fuse box 295. The guard ring 275 preferably protects a sideof the fuse box 295 as shown.

FIG. 3 illustrates a plan view of the semiconductor device in thebonding pad region formed by the method of FIGS. 2A to 2D according toan embodiment of the present invention.

As shown in FIG. 3, the fuse boxes 295 comprising a plurality of thefuses 210 are formed in the bonding pad opening 290 of the bonding padregion 202. A portion 300 surrounded by the dotted line indicates anarea where a wire bonding process is to be performed.

In FIG. 3, the fuse boxes 295 are formed preferably at four corners ofthe bonding pad opening 290, but the number and position of the fuseboxes 295 are not limited by the number and the position illustrated inFIG. 3.

According to an embodiment of the present invention, although an areafor wire bonding may be arranged on the fuse box due to themisalignment, it will not affect the semiconductor device manufacturing.This is because the fuse box is used in a laser repair process beforethe packaging process.

According to an embodiment of the present invention, the fuse box ispreferably formed self-aligned with both of the second metal line andthe guard ring, and the first metal line and the metal pattern. However,a person of ordinary skill in the art will understand that othersuitable arrangements of the fuse box can be used. For example, the fusebox may be formed self-aligned with the second metal line and the guardring, or the first metal line and the metal pattern.

The present invention provides a semiconductor device and amanufacturing method thereof capable of reducing a chip size by formingboth a fuse box and a bonding pad in a bonding pad region. Thus, thechip size can be efficiently reduced.

Thus, with the present invention, the manufacturing yield can beincreased by improving process uniformity at the edge area of a wafer.

While the invention has been particularly shown and described withreference to preferred embodiments thereof, it will be understood bythose skilled in the art that the foregoing and other changes in formand details may be made therein without departing from the spirit andscope of the invention.

1. A method for manufacturing a semiconductor device, the methodcomprising: forming a plurality of fuses in a bonding pad region of asemiconductor substrate; forming a first interlayer insulating filmoverlying the plurality of fuses; forming an etching stop layer on thefirst interlayer insulating film in the bonding pad region; forming asecond interlayer insulating film on the etching stop layer; formingmetal patterns and a first metal line on the second interlayerinsulating film in the bonding pad region; forming a third interlayerinsulating film on the metal patterns and the first metal line; forminga passivation layer overlying the resulting structure; forming a bondingpad opening in the passivation layer to expose the second metal line;and forming a fuse box within the bonding pad opening to expose of thefirst interlayer insulating film over the fuses.
 2. The method of claim1, wherein forming a bonding pad opening comprises etching the thirdinterlayer insulating film, the second interlayer insulating film andthe etching stop layer.
 3. The method of claim 1, further comprisingforming a via hole by etching the third interlayer insulating film andthe second interlayer insulating film until the etching stop layer isexposed; and forming a guard ring in the via hole and a second metalline on the third interlayer insulating film over the first metal line.4. The method according to claim 3, wherein the via hole is formedself-aligned with the metal patterns.
 5. The method according to claim1, wherein the fuse box is formed self-aligned with the first metal lineand the guard ring; the first metal line and the metal patterns; orboth.
 6. The method according to claim 1, wherein etching thepassivation layer comprises using the second metal line and the guardring as an etching stopper.
 7. A method for forming a semiconductordevice, the method comprising: forming a plurality of fuses formed in abonding pad region of a semiconductor substrate; forming an insulationfilm overlying the plurality of fuses; forming a bonding pad overlyingthe insulation film in the bonding pad region; and forming a passivationlayer overlying the insulation film and including a bonding pad openingtherein to expose the bonding pad, wherein the bonding pad openingincludes a fuse box to expose a portion of the insulation film coveringthe fuses.
 8. The method according to claim 6, further comprisingforming a guard ring at a side of the fuse box configured to protect thefuse box.